26 陽明交大光復校區-圖書館
26 Yangming National Chiao Tung University Guangfu Campus - Library

1964 年交大恢復招收大學部後，系所與研究單位快速發展，博愛校區逐漸不敷使用。1970 年代初期，校方多次向政府爭取擴校，最終於 1978 年取得位於光復路旁的陸軍威武營區，並徵收周邊民地，共形成三十餘公頃的新校地。 1980 年行政大樓落成後，校本部正式遷入，學校重心自此移至光復校區。同年，新竹科學園區成立，緊鄰校園的地理位置，使光復校區迅速成為學術研究與高科技產業交流的重要樞紐。 1988 年起開始興建固態電子系統大樓，1992 年完工後，半導體中心與國家次微米元件實驗室（NDL）陸續遷入。NDL 於 2002 年更名為國家奈米元件實驗室，2003 年改隸國家實驗研究院後遷至鄰近的奈米電子研究大樓。同年，半導體中心更名為「國立交通大學奈米中心」（Nano Facility Center）。 2021 年配合交通大學與陽明大學合校，奈米中心更名為「國立陽明交通大學奈米中心」（National Yang Ming Chiao Tung University Nano Facility Center）。奈米中心是國內大專院校中唯一規模最大、設備最完善的半導體與奈米科技研發基地，對臺灣半導體科技的發展具有深遠貢獻。 After undergraduate admissions resumed in 1964, academic departments and research units expanded rapidly, and the Bo-Ai Campus soon became insufficient. In the early 1970s, the University sought expansion and in 1978 acquired the former Wei-Wu Army Barracks near Guangfu Road, along with surrounding land, forming a new campus of over 30 hectares. With the completion of the Administration Building in 1980, the University headquarters officially moved to Guang-Fu Campus. That same year, the Hsinchu Science Park was established adjacent to the campus, making Guang-Fu a crucial hub for interaction between academia and Taiwan’s high-tech industry. Beginning in 1988, the Solid-State Electronics Building was constructed and completed in 1992, becoming home to the Semiconductor Center and the National Submicron Device Laboratories (NDL). NDL was renamed the National Nano Device Laboratory in 2002, and after joining the National Applied Research Laboratories in 2003, it moved to the neighboring Nanoelectronics Building. That same year, the Semiconductor Center was renamed the Nano Facility Center (NFC). In 2021, following the university merger, the center was renamed the National Yang Ming Chiao Tung University Nano Facility Center. It is the largest and most advanced semiconductor and nanotechnology research facility among all universities in Taiwan—uniquely unmatched in scale and capability—and has played a pivotal role in the nation’s semiconductor development.